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Slika profila

Tihomir Knežević

30438

Tihomir

Knežević

dr. sc.

Naziv Uloga Akcije
Nova generacija poluvodičkih elemenata i integriranih sklopova za eru Interneta stvari suradnik
Platforma za satelitsko mjerenje elektromagnetskog zračenja suradnik
Naziv Akcije
Bernat, Robert; Knežević, Tihomir; Radulovič, Vladimir; Snoj, Luka; Makino, Takahiro; Ohshima, Takeshi; Capan, Ivana Radiation Response of Large-Area 4H-SiC Schottky Barrier Diodes // Materials, 16 (2023), 6; 2202, 11. doi: https://doi.org/10.3390/ma16062202
Knežević, Tihomir ; Hadžipašić, Amira ; Ohshima, Takeshi ; Makino, Takahiro ; Capan, Ivana M-center in low-energy electron irradiated 4H-SiC // Applied physics letters, 120 (2022), 25; 252101, 4. doi: 10.1063/5.0095827
Thammaiah, Shivakumar D. ; Liu, Xingyu ; Knežević, Tihomir ; Batenburg, Kevin M. ; Aarnink, A.A.I. ; Nanver, Lis K. PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility // Solid-state electronics, 177 (2021), 107938, 10. doi: 10.1016/j.sse.2020.107938
Marković, Lovro ; Knežević, Tihomir ; Nanver, Lis. K. ; Suligoj, Tomislav Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer // 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO). 2021. str. 64-69 doi: 10.23919/MIPRO52101.2021.9597002
Nanver, L. K. ; Knezevic, Tihomir ; Liu, X. ; Thammaiah, S. D. ; Krakers, M. ; On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology // Journal of nanoscience and nanotechnology, 21 (2021), 4; 2472-2482. doi: 10.1166/jnn.2021.19112
Shivakumar, D. Thammaiah ; Knežević, Tihomir ; Nanver, Lis K. Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si // Journal of materials science. Materials in electronics, 32 (2021), 6; 7123-7135. doi: 10.1007/s10854-021-05422-7
Lovro Marković ; Tihomir Knežević ; Tomislav Suligoj Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode // MIPRO. 2020. str. 28-33 doi: 10.23919/MIPRO48935.2020.9245134
Krakers, M. ; Knežević, T. ; Batenburg, K.M. ; Liu, X. ; Nanver, L.K. Diode design for studying material defect distributions with avalanche–mode light emission // 2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS). Institute of Electrical and Electronics Engineers (IEEE), 2020. doi: 10.1109/icmts48187.2020.9107933
Knežević, Tihomir ; Krakers, Max ; Nanver, Lis K. Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range // Proceedings SPIE 11276, Optical Components and Materials XVII, 112760I. SPIE, 2020. doi: 10.1117/12.2546734
Knežević, Tihomir ; Liu, Xingyu ; Hardeveld, Erwin ; Suligoj, Tomislav ; Nanver, Lis K. Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes // IEEE electron device letters, 40 (2019), 6; 858-861. doi: 10.1109/led.2019.2910465
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