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Izvorni znanstveni i pregledni radovi u CC časopisima
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1. Koričić, Marko; Žilak Josip; Suligoj, Tomislav.
A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration. // IEEE transactions on electron devices. 64 (2017) , 7; 3019-3022 (članak, znanstveni).  
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2. Koričić, Marko; Žilak, Josip; Suligoj, Tomislav.
Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost. // IEEE electron device letters. 36 (2015) , 2; 90-92 (članak, znanstveni).
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3. Očko, Miroslav; Žonja, Sanja; Ivanda, Mile.
Grain growth from amorphous phase. // AIP advances. 4 (2014) ; 037125-1-037125-7 (članak, znanstveni). 
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4. Očko, Miroslav; Žonja, Sanja; Salamon, Krešimir; Ivanda, Mile; Yu, Lei; Newman, Nathan.
Investigations of the disorder in the TaxN thin films: On the first order Raman spectrum of the rock salt crystal structure. // Journal of applied physics. 114 (2013) ; 043707-1-043707-5 (članak, znanstveni).
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5. Koričić, Marko; Suligoj, Tomislav; Morita, So-ichi; Mochizuki, Hidenori; Shinomura, Katsumi; Imai, Hisaya.
Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration. // IEEE transactions on electron devices. 59 (2012) , 12; 3647-3650 (članak, znanstveni).
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6. Očko, Miroslav; Samardžija, Zoran; Žonja, Sanja; Aviani, Ivica.
Structural and electronic properties of the highly concentrated UxY1-xRu2Si2 alloy system. // Journal of alloys and compounds. 512 (2012) , 1; 79-84 (članak, znanstveni).
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7. Biasotto, Cleber; Gonda, Viktor; Nanver, Lis K.; Scholtes, Tom L.M.; van der Cingel, Johan; Vidal, Daniel; Jovanović, Vladimir.
Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions. // Journal of electronic materials. 40 (2011) , 11; 2187-2196 (članak, znanstveni).
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8. Hrauda, Nina; Zhang, Jianjun; Wintersberger, Eugen; Etzelstorfer, Tanja; Mandl, Bernhard; Stangl, Julian; Carbone, Dina; Holý, Vaclav; Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K.; Moers, Jürgen; Grützmacher, Detlev; Bauer, Günther.
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor. // Nano letters. 11 (2011) , 7; 2875-2880 (članak, znanstveni).
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9. Nanver, Lis K.; Jovanović, Vladimir; Biasotto, Cleber; Moers, Juergen; Gruetzmacher, Detlev; Zhang, Jianjun; Hrauda, Nina; Stoffel, Mathieu; Pezzoli, Fabio; Schmidt, Oliver G.; Miglio, Leo; Kosina, Hans; Marzegalli, Anna; Vastola, Guglielmo; Mussler, Gregor; Stangl, Julian; Bauer, Guenther; van der Cingel, Johan; Bonera, Emiliano.
Integration of MOSFETs with SiGe dots as stressor material. // Solid-state electronics. 60 (2011) , 1; 75-83 (članak, znanstveni).
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10. Očko, Miroslav; Žonja, Sanja; Aviani, Ivica; Bauer, Eric D.; Sarrao, John L.
Transport properties of the YbAl3 compound: On the energy scales of YbAl3 from thermopower data. // Journal of alloys and compounds. 509 (2011) , 25; 6999-7003 (članak, znanstveni).
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11. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications. // Solid-state electronics. 65/66 (2011) ; 130-138 (članak, znanstveni).
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12. Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K; Moers, Juergen; Gruetzmacher, Detlev; Gerharz Julian; Mussler, Gregor; van der Cingel, Johan; Zhang Jianjun; Bauer, Guenther; Schmidt, Oliver G; Miglio, Leo.
n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility. // IEEE electron device letters. 31 (2010) , 10; 1083-1085 (članak, znanstveni).
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13. Jovanović, Vladimir; Suligoj, Tomislav; Poljak, Mirko; Civale, Yann; Nanver, Lis K.
Ultra-high aspect-ratio FinFET technology. // Solid-state electronics. 54 (2010) , 9; 870-876 (članak, znanstveni).
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14. Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya.
Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology. // Solid-state electronics. 54 (2010) , 10; 1166-1172 (članak, znanstveni).
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15. Očko, Miroslav; Žonja, Sanja; Nelson G.L.; Freericks, J.K.; Yu, Lei; Newman, N.
Low temperature transport properties of TaxN thin films (0.72≤ x ≤ 0.83). // Journal of physics. D, Applied physics. 43 (2010) , 44; 445405-1-445405-12 (članak, znanstveni).
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16. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs. // Microelectronic Engineering. 87 (2010) , 2; 192-199 (članak, znanstveni).
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17. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya.
Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs. // IEEE electron device letters. 31 (2010) , 6; 534-536 (članak, znanstveni).
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18. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs. // Solid-state electronics. 54 (2010) , 5; 545-551 (članak, znanstveni).
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19. Hrauda, Nina; Zhang, Jianjun; Stangl, J.; Rehman-Khan, A.; Bauer, Guenther; Stoffel, Mathieu; Schmidt, Oliver G.; Jovanović, Vladimir; Nanver, Lis K.
X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility. // Journal of Vacuum Science and Technology B - Microelectronics and Nanometer Structures Processing, Measurement and Phenomena. 27 (2009) , 2; 912-918 (članak, znanstveni).
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20. Hrauda, Nina; Zhang, Jianjun; Stoffel, Mathieu; Stangl, J.; Bauer, Guenther; Rehman-Khan, A.; Holy, V.; Schmidt, Oliver G.; Jovanović, Vladimir; Nanver, Lis K.
X-ray diffraction study of the composition and strain fields in buried SiGe islands. // The European physical journal. Special topics. 167 (2009) , 1; 41-46 (članak, znanstveni).
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21. Očko, Miroslav; Žonja, Sanja; Stubičar, Mirko; Stubičar, Nada; Bauer, Eric D.; Sarrao, John L.
Why YbxLu1-xAl3 and YbxY1-xInCu4 have quite opposite concentration dependence of the Vickers microhardness?. // Solid State Communications. 149 (2009) , 33-34; 1313-1316 (članak, znanstveni).
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22. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Improving bulk FinFET DC performance in comparison to SOI FinFET. // Microelectronic engineering. 86 (2009) , 10; 2078-2085 (članak, znanstveni).
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23. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs. // Solid-state electronics. 53 (2009) , 5; 540-547 (članak, znanstveni).
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24. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model. // Solid-State Electronics. 52 (2008) , 10; 1505-1511 (članak, znanstveni).
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25. Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Biljanović, Petar.
Low temperature resistivity of heavily boron doped LPCVD polysilicon thin films. // Journal of physics. D, Applied physics. 41 (2008) , 16; (članak, znanstveni).
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26. Zhang, Jianjun; Stoffel, Mathieu; Rastelli, Armando; Schmidt, Oliver G.; Jovanović, Vladimir; Nanver, Lis K.; Bauer, Guenther.
SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening. // Applied Physics Letters. 91 (2007) , 17; 173115-1-173115-3 (članak, znanstveni).
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Znanstveni radovi u drugim časopisima
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1. Koričić, Marko; Suligoj, Tomislav.
BVCEO Engineering in SOI LBT Structure with Top Contacted Base. // Informacije MIDEM Journal of Microelectronics, Electronic Components and Materials. 41 (2011) , 2; 77-85 (članak, znanstveni).
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2. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Vertical Silicon-on-Nothing FET: Subthreshold Slope Calculation Using Compact Capacitance Model. // Informacije MIDEM Journal of Microelectronics, Electronic Components and Materials. 38 (2008) , 1; 1-4 (članak, znanstveni).
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3. Kuzmanović, Branislav; Baus, Zoran; Biljanović, Petar.
Influence of p-n Capacity Barrier on Optimal RC Protection of Thyristors. // Journal of electrical engineering. 58 (2007) , 3; 140-145 (članak, znanstveni).
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Ostali radovi u drugim časopisima
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1. Biljanović, Petar; Žonja, Sanja.
Temelji mikroelektronike. // Ei (Zagreb). 16 (2008) , 1; 52-56 (pregledni rad, stručni).
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2. Biljanović, Petar; Žonja, Sanja.
Osnove mikroelektronike. // Ei (Zagreb). 16 (2008) , 2; 58-62 (pregledni rad, stručni).
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3. Biljanović, Petar; Kuzmanović, Branislav; Baus, Zoran.
Statička svojstva tiristora. // Ei (Zagreb). 11-12 (2007) , 3-4; 79-80 (članak, ostalo).
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Objavljena pozvana predavanja na skupovima
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1. Hrabar, Silvio; Krois, Igor; Kiricenko, Aleksandar; Bonic, Ivan.
Homogenization of Active Transmission-line-based ENZ Metamaterials // Proceedings on IEEE APS 2010 Symposium / Ed (ur.).
Toronto : Institute of Electrical and Electronics Engineers (IEEE), 2010. 170-173 (pozvano predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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2. Armellini, C.; Bhaktha, S.N.B.; Beclin, F.; Berneschi, S.; Biljanović, Petar; Bouazaoui, M.; Boulard, B.; Capoen, B.; Chiappini, A.; Chiasera, A.; Duverger-Arfuso, C.; Feron, P.; Ferrari, M.; Kinowski, C.; Ivanda, Mile; Jestin, Y.; Moser, E.; Nunzi Conti, G.; Pelli, S.; Righini, G.C.; Robbe, O.; Speranza, G.; Turrell, S.
Rare-earth-activated nano-structures fabricated by sol-gel route // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2009. 27-32 (pozvano predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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3. Hrabar, Silvio; Krois, Igor; Matvijev, Marijan.
Is it Possible to Overcome Basic Dispersion Constraints and Achieve Broadband Cloaking? // Proceedings on THE THIRD INTERNATIONAL CONGRESS ON ADVANCED ELECTROMAGNETIC MATERIALS IN MICROWAVES AND OPTICS / Tretyakov, Sergei (ur.).
London : Delhi : Publications and Web Office for the School of Electronic Engineering and Computer Science, 2009. 408-410 (pozvano predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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4. Nanver, Lis K; Jovanović, Vladimir; Biasotto, Cleber; van der Cingel, Johan; Milosavljević, Silvana.
Application of Laser Annealing in the EU FP6 Project D-DotFET // Proceedings of 17th International Conference on Advanced Thermal Processing of Semiconductors, RTP '09.
2009. 1-7 (pozvano predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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5. Armellini, C; Biljanović, P; Berneschi, S; Bhaktha, S.N.B; Boulard, B; Chiappini, A; Chiasera, A; Arfuso Duverger, C; Feron, P; Ferrari, M; Huy, P.T; Ivanda, M; Jestin, Y; Moser, E; Nunzi Conti, G; Pelli, S; Righini, G.C; Speranza, G.
Optical properties and fabrication of glass-based erbium activated micro-nano photonic structures // Proceedings of MIPRO 2008 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Denona, 2008. 21-26 (pozvano predavanje,međunarodna recenzija,objavljeni rad).
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6. Armellini, C.; Biljanović, Petar; Chiappini, A.; Chiasera A.; Ferrari, M.; Ivanda, Mile (predavač); Jestin, Y.; Mattarelli, M.; Minati, L.; Montagna, M.; Moser, E.; Nunzi Conti, G.; Pelli, S.; Righini, C. G.; Speranza, G.; Tosello, C.
Nanocomposite Photonic Glasses and Confined Structures Tailoring Er3+ Spectroscopic Properties // Proceedings of MIPRO 2007, MEET & HGS / Biljanović, P. ; Skala, K. (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2007. 19-22 (pozvano predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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Znanstveni radovi u zbornicima skupova s međunar.rec.
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1. Koričić, Marko; Žilak, Josip; Osrečki, Željko; Suligoj, Tomislav.
Analysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates // Proceedings of the 41st International Convention MIPRO 2018.
2018. 66-71 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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2. Koričić, Marko; Žilak, Josip; Suligoj, Tomislav.
Impact of the Local p-well Substrate Parameters on the Electrical Performance of the Double- Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor // Proceedings of the 40th International Convention MIPRO 2017 / Biljanović, Petar (ur.).
Rijeka, 2017. 91-95 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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3. Koričić, Marko; Žilak, Josip; Suligoj, Tomislav.
Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms // Proceedings of the 2016 Bipolar/BiCMOS Circuits and Technology Meeting.
Institute of Electrical and Electronics Engineers (IEEE), 2016. 25-28 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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4. Koričić, Marko; Žilak, Josip; Suligoj, Tomislav.
Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region // Proceedings of the 38th International Convention MIPRO 2015 / Biljanović, Petar (ur.).
Rijeka, 2015. 31-36 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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5. Očko, Miroslav; Žonja, Sanja; Ivanda, Mile.
Some physical problems in preparation and analysis of heavily boron and phosphorus doped polysilicon thin films // Proceedings of MIPRO 2013, 36st international convention on information and communication technology, elecronics and microelectronics, May 20-24, 2013 / Biljanović, Petar ; Skala, Karolj (ed) (ur.).
Opatija, 2013. 27-32 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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6. Suligoj, Tomislav; Koričić, Marko; Žilak, Josip; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya.
Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer // Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting.
Institute of Electrical and Electronics Engineers (IEEE), 2013. 13-16 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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7. Očko, Miroslav; Žonja, Sanja; Ivanda, Mile.
Role of the substrate and the temperature of deposition on the properties of the TaxN thin films // .
(predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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8. Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Biljanović, Petar.
On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials // .
(predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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9. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya.
Examination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region // Proceedings of the 2012 Bipolar/BiCMOS Circuits and Technology Meeting.
Institute of Electrical and Electronics Engineers (IEEE), 2012. 5-8 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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10. Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya.
Examination of Novel High-voltage Double-emitter Horizontal Current Bipolar Transistor (HCBT) // Proceedings of the 2011 Bipolar/BiCMOS Circuits and Technology Meeting.
Institute of Electrical and Electronics Engineers (IEEE), 2011. 5-8 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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11. Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi; Shinomura, Katsumi; Imai, Hisaya.
Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology // Proceedings of MIPRO 2011, Vol.1. MEET&GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2011. 61-65 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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12. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb : Denona, 2011. 71-76 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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13. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ) : Institute of Electrical and Electronics Engineers (IEEE), 2011. 114-115 (poster,međunarodna recenzija,objavljeni rad,znanstveni).
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14. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ) : Institute of Electrical and Electronics Engineers (IEEE), 2011. 156-157 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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15. Žonja, Sanja; Ivanda, Mile; Očko, Miroslav; Suligoj, Tomislav; Koričić, Marko; Biljanović, Petar.
Structural and Electronic Properties of Heavily Phosphorus Doped Polycrystalline Silicon Thin Films // Proceedings of 34th International Convention MIPRO 2011 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Denona, 2011. 55-60 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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16. Jovanović, Vladimir; Biasotto, Cleber; Moers, Juergen; Grützmacher, Detlev; Zhang, Jianjun; Hrauda, Nina; Stoffel, Mathieu; Pezzoli, Fabio; Schmidt, Oliver G.; Miglio, Leo; Kosina, Hans; Marzegalli, Anna; Vastola, Guglielmo; Mussler, Gregor; Stangl, Julian; Bauer, Guenther; van der Cingel, Johan; Bonera, Emiliano, Nanver, Lis K.
N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility // Proceedings of 13th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2010.
2010. 101-104 (poster,međunarodna recenzija,objavljeni rad,znanstveni).
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17. Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K.; Moers, Juergen; Grützmacher, Detlev; Gerharz, Julian; Mussler, Gregor; van der Cingel, Johan; Zhang, Jianjun; Bauer, Guenther; Schmidt, Oliver G.; Miglio, Leo.
MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility // Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010 / Tang, Ting-Ao ; Jiang, Yu-Long (ur.).
2010. 926-928 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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18. Mavrek, Elena; Lončarić, Ivan; Poljak, Ivan; Koričić, Marko; Suligoj, Tomislav.
Effect of parasitic RLC parameters in bias networks on ECL delay time // Proceedings of the 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb : Denona, 2010. 99-103 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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19. Očko, Miroslav; Žonja, Sanja; Ivanda, Mile.
Thermoelectric materials: problems and perspectives // Proceedings of 33rd International Convention MIPRO 2010 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2010. 42-47 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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20. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs // Proceedings of the 11th International Conference on Ultimate Integration on Silicon / S. Roy (ur.).
Glasgow, 2010. 21-24 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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21. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb : Denona, 2010. 74-79 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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22. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres (ur.).
Sevilla : Institute of Electrical and Electronics Engineers (IEEE), 2010. 242-245 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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23. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. (ur.).
Ljubljana : BIRO M, 2010. 101-105 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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24. Šakić, Agata; Civale, Yann; Nanver, Lis K.; Biasotto, Cleber; Jovanović, Vladimir.
Al-mediated Solid-Phase Epitaxy of Silicon-On- Insulator // Materials Research Society Symposium Proceedings, Volume 1245 / Wang, Qi ; Yan, Baojie ; Flewitt, Andrew ; Tsai, Chuang-Chuang ; Higashi, Seiichiro (ur.).
Warrendale (PA) : Materials Research Society, 2010. 427-432 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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25. Šakić, Agata; Jovanović, Vladimir; Maleki, Parastoo; Scholtes, Tom L.M.; Milosavljević, Silvana; Nanver, Lis K.
Characterization of amorphous boron layers as diffusion barrier for pure aluminium // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb : Denona, 2010. 26-29 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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26. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
2-D front- and back-gate potential distribution model of submicrometer VFD SONFET // Proceedings of the 33rd International Convention MIPRO / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb : Denona, 2010. 69-73 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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27. Biasotto, Cleber; Gonda, Viktor; Nanver, Lis K.; van der Cingel, Johan; Jovanović, Vladimir.
Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation // Electrochemical Society Transactions / De Lima Monteiro, D. ; Bonnaud, O. ; Morimoto, N. (ur.).
The Electrochemical Society (ECS), 2009. 19-27 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
28. Biasotto, Cleber; Jovanović, Vladimir; Gonda, Viktor; van der Cingel, Johan; Milosavljević, Silvana; Nanver, Lis K.
Integration of Laser-Annealed Junctions in a Low- Temperature High-k Metal-Gate MISFET // Proceedings of the 10th International Conference on ULtimate Integration of Silicon / Mantl, S. ; Lemme, M. ; Schubert, J. ; Albrecht, W. (ur.).
2009. 181-184 (poster,međunarodna recenzija,objavljeni rad,znanstveni).
|
29. Blečić, Raul; Ivanković, Andrej; Divković Pukšec, Julijana.
Kernighan-Lin algorithm for n-way circuit partitioning // Proceedings of 32nd International Convention MIPRO / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2009. 186-190 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
30. Jovanović, Vladimir; Nanver, Lis K.; Suligoj, Tomislav; Poljak, Mirko.
Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices // Proceedings of the 39th European Solid-State Device Research Conference / Tsoukalas, D. ; Dimoulas, A. (ur.).
Atena : Institute of Electrical and Electronics Engineers (IEEE), 2009. 241-244 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
31. Jovanović, Vladimir; Poljak, Mirko; Suligoj, Tomislav.
FinFET Considerations for 0.18 um Technology // Proceedings of 45th International Conference on Microelectronics, Devices and Materials MIDEM 2009 / Topič M. ; Krč, J. ; Šorli, I. (ur.).
Ljubljana : Society for Microelectronics, Electronic Components and Materials (MIDEM), 2009. 91-96 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
32. Jovanović, Vladimir; Poljak, Mirko; Suligoj, Tomislav; Civale, Yann; Nanver, Lis K.
1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs // Device Research Conference - Conference Digest / Koester, S. ; Gundlach, D. ; Fay, P. (ur.).
Institute of Electrical and Electronics Engineers (IEEE), 2009. 261-262 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
33. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2009. 95-100 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
34. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Suppression of Corner Effects in Triple-Gate Bulk FinFETs // Proceedings of the International IEEE Conference EUROCON 2009 / Mironenko, I. ; Mikerov, A. (ur.).
Sankt Peterburg : Institute of Electrical and Electronics Engineers (IEEE), 2009. 1-6 (poster,međunarodna recenzija,objavljeni rad,znanstveni).
|
35. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep (ur.).
College Park (MD) : Institute of Electrical and Electronics Engineers (IEEE), 2009. 1-2 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
36. Suligoj, Tomislav; Koričić, Marko; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.
Horizontal Current Bipolar Transistor (HCBT) for the Low-cost BiCMOS Technology // Proceedings of the 39th European Solid-State Device Research Conference / Tsoukalas, D. ; Dimoulas, A. (ur.).
Atena : Institute of Electrical and Electronics Engineers (IEEE), 2009. 359-362 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
37. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Compact Capacitance Model for Drain-Induced Barrier-Lowering of Vertical SONFET // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2009. 85-88 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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38. Vilman, Viktor; Ristić, Davor; Ivanda, Mile; Biljanović, Petar; Gamulin, Ozren; Furić, Krešimir; Ristić, Mira; Musić, Svetozar.
Low pressure chemical vapor deposition of thin SiOx films in oxygen and nitrogen atmospheres // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2009. 41-45 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
39. Žonja, Sanja; Ivanda, Mile; Očko, M.; Biljanović, Petar; Suligoj, Tomislav; Koričić, Marko; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.
Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2009. 46-51 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
40. Grgec, Dalibor.
Calculation Methods for Tunneling Transmission Coefficients // Proceedings of MIPRO 2008 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka, 2008. 96-101 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
41. Hoellt, Lothar; Schulze, Joerg; Eisele, Ignaz; Suligoj, Tomislav; Jovanović, Vladimir; Thompson, Phill E.
First sub-30nm vertical Silicon-On-Nothing MOSFET // Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K. (ur.).
Zagreb : Denona, 2008. 90-95 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
42. Jovanović, Vladimir; Suligoj, Tomislav; Biljanović, Petar : Nanver, Lis K.
FinFET technology for wide-channel devices with ultra-thin silicon body // Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K. (ur.).
Zagreb : Denona, 2008. 79-83 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
|
43. Jovanović, Vladimir; Suligoj, Tomislav; Nanver, Lis K.
Silicon-Etching For Ultra-High Aspect-Ratio FinFET // Transactions of the 213th Electrochemical Society Meeting ECS 2008 / Timans, P.J. ; Gusev, E.P. ; Iwai, H. ; Kwong, D.L. ; Ozturk, M.C. ; Roozeboom, F. (ur.).
Pennington (NJ) : ECS, 2008. 313-320 (poster,međunarodna recenzija,objavljeni rad,znanstveni).
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44. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics // Proceedings of the 14th IEEE Mediterranean Electrotechnical Conference (MELECON) / G. A. Capolino, J. F. Santucci (ur.).
Ajaccio : Institute of Electrical and Electronics Engineers (IEEE), 2008. 425-430 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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45. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode // Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K. (ur.).
Zagreb : Denona, 2008. 73-78 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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46. Šakić, Agata; Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs // Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K. (ur.).
Zagreb : Denona, 2008. 84-89 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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47. Vilman, Viktor; Ivanda, Mile; Biljanović, Petar; Gamulin, Ozren; Ristić, Davor; Furić, Krešimir; Ristić, Mira; Musić, Svetozar.
Low pressure chemical vapor deposition of thin SiOx films by chemical reaction of SiH4, O2 and N2: gaseous: preparation and characterization // Proceedings of MIPRO 2008 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Denona, 2008. 35-37 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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48. Žonja, Sanja; Ivanda, Mile; Očko, Miroslav; Biljanović, Petar; Furić, Krešimir.
Low pressure chemical vapour deposition of heavily boron doped polycrystalline silicon thin films: preparation and characterizations // Proceedings of MIPRO 2008 / Biljanović, Petar ; Skala, Karolj (ur.).
Rijeka : Denona, 2008. 38-42 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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49. Gebavi, Hrvoje; Ivanda, Mile; Hršak, Damir; Ristić, Davor; Furić, Krešimir; Musić, Svetozar; Ristić, Mira; Žonja, Sanja; Biljanović, Petar; Gamulin, Ozren; Balarin, Maja; Montagna, M.; Ferarri, M.; Righini, G.C.
The preparation of thin silica layers by wet thermal oxidation // Proceedings of the VIIth International Conference Preparation of ceramic materials / Plešingerova, Beatrice ; Kuffa, Tarzicius (ur.).
Košice : Technical University of Košice, 2007. 105-107 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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50. Jovanović, Vladimir; Milosavljević, Silvana; Nanver, Lis K.; Suligoj, Tomislav; Biljanović, Petar.
Sub-100 nm Silicon Nitride Hard-Mask for High Aspect Ratio Silicon Fins // Proceedings of MIPRO 2007, MEET & HGS / Biljanović, P. ; Skala, K. (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2007. 62-66 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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51. Jovanović, Vladimir; Shi, Lei; Lorito, Gianpaolo; Piccolo, Giulia; Sarubbi, Francesco; Nanver, Lis K.
Integration of Junction FETs in Back-wafer Contacted Silicon-On-Glass Technology // Proceedings of 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2007.
2007. (poster,međunarodna recenzija,objavljeni rad,znanstveni).
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52. Poljak, Mirko; Biljanović, Petar; Suligoj, Tomislav.
Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs // Proceedings of the 30th International Convention MIPRO 2007 / P. Biljanović, K. Skala (ur.).
Rijeka, 2007. 78-83 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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53. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Technological constrains of bulk FinFET structure in comparison with SOI FinFET // Proceedings of International Semiconductor Device Research Symposium / Jones, K. (ur.).
College Park (MD), 2007. (poster,međunarodna recenzija,objavljeni rad,znanstveni).
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54. Ristić, Davor; Ivanda, Mile; Biljanović, Petar; Žonja, Sanja; Furić, Krešimir; Musić, Svetozar; Ristić, Mira; Montagna, Maurizio; Ferrari, Maurizio; Righini, C.G.
Structural and Optical Properties of Silicon Nanocrystals Prepared by Phase Separation of Si-rich Silicon Oxide // Proceedings of the 30th MIPRO 2007 International Convention / Biljanović, P. ; Skala, K. (ur.).
Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2007. 40-44 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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55. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Vertical silicon-on-nothing FET: analytical model of subthreshold slope // 43rd INTERNATIONAL CONFERENCE ON MICROELECTRONICS, DEVICES AND MATERIALS AND THE WORKSHOP ON ELECTRONIC TESTING / Trontelj, J. ; Novak, F. ; Šorli, I. (ur.).
Ljubljana : Society for Microelectronics, Electronic Components and Materials (MIDEM), 2007. 71-74 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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56. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Vertical Silicon-on-Nothing FET: Treshold Voltage Calculation Using Compact Capacitance Model // 2007 International Semiconductor Device Research Symposium / Jones, Ken (ur.).
2007. (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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57. Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav.
Vertical Silicon-on-Nothing FET: Capacitance-Voltage Compact Modeling // Proceedings of the 30th International Convention MIPRO 2007 / P. Biljanović, K. Skala (ur.).
Rijeka : Studio Hofbauer, 2007. 84-88 (predavanje,međunarodna recenzija,objavljeni rad,znanstveni).
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58. Jovanović, Vladimir; Milosavljević, Silvana; Nanver, Lis K.; Suligoj, Tomislav.
Application of spacer hard-masks for sub-100 nm wide silicon fin-etching // Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006.
(poster,međunarodna recenzija,objavljeni rad,znanstveni).
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59. Shi, Lei; Lorito, Gianpaolo; Jovanović, Vladimir; Fregonese, Sebastien; Nanver, Lis K.
JFET test structures for monitoring strain-enhanced mobility // Proceedings of 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2006.
(poster,međunarodna recenzija,objavljeni rad,znanstveni).
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Sažeci u zbornicima skupova
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1. Stubičar, Mirko; Stubičar, Nada; Milinović, Andrijana; Krumes, Dragomir; Ivanda, Mile; Žonja, Sanja; Očko, Miroslav.
Synthesis and Characterization of some Clathrate Compounds // Knjiga sažetaka 7. znanstvenog sastanaka HFD-a.
(poster,sažetak,znanstveni).
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2. Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Koričić, Marko; Biljanović, Petar.
Tanki slojevi fosforom visokodopiranog polikristalnog silicija s mogućom primjenom na području termoelektrika // Knjiga sažetaka 7. znanstvenog sastanaka HFD-a.
(poster,sažetak,znanstveni).
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3. Očko, Miroslav; Žonja, Sanja; Ivanda, Mile.
Silicon goes thermoelectric // .
(poster,sažetak,znanstveni).
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4. Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Suligoj, Tomislav; Koričić, Marko; Biljanović, Petar.
Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics // .
(poster,sažetak,znanstveni).
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5. Očko, Miroslav; Žonja, Sanja; Ivanda, Mile.
Report on the recent investigations of the systems which assume some of the good thermoelectric properties // .
(poster,sažetak,znanstveni).
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6. Očko, Miroslav; Žonja, Sanja; Ivanda, Mile.
Thermoelectric devices and solar energy // .
(poster,sažetak,znanstveni).
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7. Nanver, Lis K.; Biasotto, Cleber; Jovanović, Vladimir; Moers, Juergen; Gruetzmacher, Detlev; Zhang, Jianjun; Bauer, Guenther; Schmidt, Oliver G.; Miglio, Leo; Kosina, Hans; Marzegalli, Anna; Vastola, Guglielmo; Mussler, Georg; Hrauda, Nina; Stangl, Julian; van der Cingel, Johan; Pezzoli, Fabio; Bonera, Emiliano.
SiGe dots as stressor material for strained Si devices // .
(pozvano predavanje,međunarodna recenzija,sažetak,znanstveni).
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8. Hrauda, Nina; Etzelstorfer, Tanja; Strangl, Julian; Carbone, Dina; Bauer, Guenther; Biasotto, Cleber; Jovanović, Vladimir; Nanver, Lis; Moers, Juergen; Gruetzmacher, Detlev.
Field-effect Transistor Devices Based on Strained Si Channels Above Buried 2D Periodic SiGe Quantum Dots // .
(poster,međunarodna recenzija,sažetak,znanstveni).
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9. Hrabar, Silvio; Krois, Igor; Kiricenko, Aleksandar; Bonic, Ivan.
Non-Foster Active Transmission Line with Nearly Dispersionless ENZ Behavior // META 10 2nd Interantional Conference on Metamaterials, Photonic Crystals and Plasmonics, abstract book / Zouhdi, Said (ur.).
Pariz : University of Paris, 2010. 33-33 (pozvano predavanje,međunarodna recenzija,sažetak,znanstveni).
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10. Koričić, Marko; Suligoj, Tomislav; Mochizuki, H.; Morita, S.; Shinomura, K.; Imai, H.
Design Considerations for Integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm Bulk CMOS Technology // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep (ur.).
College Park (MD) : Institute of Electrical and Electronics Engineers (IEEE), 2009. 1-2 (predavanje,međunarodna recenzija,sažetak,znanstveni).
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11. Očko, Miroslav; Zadro, Krešo; Drobac Djuro; Bermanec, Vladimir; Aviani, Ivica; Žonja, Sanja; Mixson, Dainiel; Bauer, Eric D; Sarrao, John L.
Magnetska svojstva CexLa1−xPt Kondo feromagneta // Knjiga sažetaka 6. znanstvenog sastanka Hrvatskog fizikalnog društva.
Zagreb, 2009. 145-145 (poster,sažetak,znanstveni).
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12. Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Biljanović, Peter.
Proučavanje visoko dopiranih slojeva LPVCD polikristalnog silicija // Knjiga sažetaka 6. znanstvenog sastanka Hrvatskog fizikalnog društva.
Zagreb, 2009. 132-132 (poster,sažetak,znanstveni).
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13. Očko, Miroslav; Žonja, Sanja; Bauer, Eric D.; Sarrao, John L.
On the energy scales of YbAl3 from the thermopower data: the role of coherence on thermopower // .
(poster,sažetak,znanstveni).
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14. Očko, Miroslav; Žonja, Sanja; Yu, Lei.
Transport Properties of the TaxN thin films // .
(poster,sažetak,znanstveni).
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15. Žonja, Sanja; Očko, Miroslav; Ivanda, Mile; Biljanović, Petar.
Thermoelectric properties of the LPCVD obtained Si:B thin films // .
(poster,sažetak,znanstveni).
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16. Hrabar, Silvio; Krois, Igor; Ivšić, Branimir; Zaluški, Davor; Pavlaković, Goran.
Active Dispersionless ‘ Plasmonic’ Metamaterial - a Step Towards Broadband Cloaking // Proceedings of the 2008 IEEE AP-S International Symposium and USNC/URSI National Radio Science Meeting.
San Diego (CA), 2008. 203-203 (predavanje,međunarodna recenzija,sažetak,znanstveni).
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Disertacije
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1. Žonja, Sanja.
Analiza strukture, elektronskih i transportnih svojstava visokodopiranih polikristalnih silicijskih tankih filmova / doktorska disertacija.
Zagreb : Fakultet elektrotehnike i računarstva, 04.07. 2013.,
136 str. Voditelj: Ivanda, Mile ; Koričić, Marko.
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2. Grgec, Dalibor.
KVANTNOMEHANIČKO MODELIRANJE U MONTE CARLO SIMULACIJAMA MOS STRUKTURA / doktorska disertacija.
Zagreb : Fakultet elektrotehnike i računarstva, 29.09. 2011.,
232 str. Voditelj: Biljanović, Petar.
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3. Jovanović, Vladimir.
Fin technology for wide-channel FET structures / doktorska disertacija.
Zagreb : Fakultet elektrotehnike i računarstva, 24.04. 2008.,
116 str. Voditelj: Biljanović, Petar.
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4. Koričić, Marko.
Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology / doktorska disertacija.
Zagreb : Fakultet elektrotehnike i računarstva, 03.07. 2008,
159 str. Voditelj: Suligoj, Tomislav.
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5. Sviličić, Boris.
Modeliranje i optimizacija vertikalnog potpuno osiromašenog MOSFET-a u tehnologiji Silicija ni na čemu / doktorska disertacija.
Zagreb : Fakultet elektrotehnike i računarstva, 14.05. 2008.,
147 str. Voditelj: Biljanović, Petar.
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Diplomski radovi
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1. Parat, Neven.
CMOS linearni sklopovi / diplomski rad.
Zagreb : Fakultet elektrotehnike i računarstva, 23.11. 2006.,
77 str. Voditelj: Biljanović, Petar.
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Patenti
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1. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi.
Semiconductor Device Comprising a Lateral Bipolar Transistor.
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2. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi.
Semiconductor Device Comprising a Lateral Bipolar Transistor.
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3. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi.
Semiconductor Device and Method for Manufacturing Semiconductor Device.
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4. Koričić, Marko; Suligoj, Tomislav; Mochizuki, H.; Morita, S.
Semiconductor Device and Method for Manufacturing Semiconductor Device.
|
5. Koričić Marko; Suligoj Tomislav; Mochizuki Hidenori; Morita Soichi.
Semiconductor device and method for manufacturing semiconductor device.
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6. Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi.
Semiconductor device and fabrication method thereof.
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7. Koričić, Marko; Suligoj, Tomislav; Mochizuki, Hidenori; Morita, So-ichi.
Semiconductor device and fabrication method thereof.
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8. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi.
Hybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same.
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9. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi.
Hybrid-integrated Lateral Bipolar Transistor and CMOS Transistor and Method for Manufacturing the Same.
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10. Suligoj, Tomislav; Koričić, Marko; Mochizuki, Hidenori; Morita, So-ichi.
Semiconductor Device and Method for Manufacturing Semiconductor Device.
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Sadržaj objavljen na bib.irb.hr (osim ako je drugačaije navedeno) podložan je pravilima Creative Commons licence
