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Determination of valence and conduction‐band discontinuities at the (Ga, In) P/GaAs heterojunction by C‐V profiling

The valence and conduction band discontinuities for the lattice matched (Ga, In)P/GaAs heterojunction have been determined by capacitance‐voltage (C‐V) profiling. Both p‐p and n‐n heterojunctions were profiled, in order to obtain separate and independent values for both the valence‐band‐edge discontinuity (ΔEv) and the conduction‐band discontinuity (ΔEc). The band lineup is found to be of the straddling type with the valence‐ and conduction‐band discontinuities 0.24 and 0.22 eV, respectively, with an estimated accuracy of ±10 meV. Computer reconstruction of the C‐V profiles was used to check the consistency of the data. The band offset data indicate that the (Ga, In)P/(Al, Ga)As system should be staggered for a certain range of Al compositions.

Heterojunctions ; Conduction‐band discontinuities ; C‐V profiles

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