engleski

Characterisation of metal mirrors on GaAs

The authors describe a Fabry-Perot technique for determining the reflectivity and the phase of the interface between semiconductor and a multilayer metal structure as it will be realised in actual device fabrication. The reflection coefficients of GaAs to Ti/Au, Pd/Au, Au and Ag interfaces are measured at 1.55 /spl mu/m.

Mirrors, Fabry-Perot interferometers, Semiconductor-metal interfaces, Gallium compounds, Optical reflection, Integrated optics

nije evidentirano