engleski

Silicon heterointerface photodetector

We report the demonstration of an infrared avalanche photodetector that uses an InGaAs absorption layer and a Si avalanche multiplication layer bonded by wafer fusion. Photocurrent measurements of the silicon heterointerface photodetector showed high response to 1.3 μm light and gains of up to 130. Frequency response measurements for the detectors yielded 3 dB bandwidth products of up to 81 GHz.

photodetectors ; silicon avalanche photodiodes ; semiconductor insulator semiconductor structures ; infrared detectors

nije evidentirano