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Comparison of GaN HEMTs on Diamond and SiC Substrates

The performance of AlGaN/GaN high-electron- mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on- diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.

Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers

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