Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers (CROSBI ID 240728)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Reynolds, T.E. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.
engleski
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room- temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.
Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes
Rad je kao predavanje prezentiran na skupovima: IEEE 49th Annual Device Research Conference, održanom od 17.-19.06.1991.g., Boulder, Colorado, SAD ; uz međunarodnu recenziju objavljen u Zborniku ; str. 1041-1135. ; i IEEE Lasers and Electro-Optics Society 1991 Annual Meeting Digest, održanom 1991.g., San Jose, Kalifornija, SAD.
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o izdanju
Povezanost rada
nije evidentirano