Nalazite se na CroRIS probnoj okolini. Ovdje evidentirani podaci neće biti pohranjeni u Informacijskom sustavu znanosti RH. Ako je ovo greška, CroRIS produkcijskoj okolini moguće je pristupi putem poveznice www.croris.hr
izvor podataka: crosbi

Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers (CROSBI ID 240729)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Wada, Hiroshi ; Babić, Dubravko I. ; Ishikawa, Masayuki ; Bowers, John E. Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers // Applied physics letters, 60 (1992), 24; 2974-2976. doi: 10.1063/1.106781

Podaci o odgovornosti

Wada, Hiroshi ; Babić, Dubravko I. ; Ishikawa, Masayuki ; Bowers, John E.

engleski

Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers

The active-area dependence of the threshold current density of GaInAsP/InP vertical-cavity lasers at various temperatures is measured. The threshold current density was found to increase monotonically with increasing active area, with the effect becoming more pronounced at higher temperature. This phenomenon is due to nonuniform current injection into the active region.

carrier injection ; indium gallium arsenides ; indium phosphides ; laser cavities ; surface emitting lasers ; carrier density (solid state) ; current density ; p-type semiconductors ; temperature dependence ; threshold currents

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

Podaci o izdanju

60 (24)

1992.

2974-2976

objavljeno

0003-6951

1077-3118

10.1063/1.106781

Povezanost rada

Elektrotehnika

Poveznice
Indeksiranost