Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers (CROSBI ID 240729)
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Podaci o odgovornosti
Wada, Hiroshi ; Babić, Dubravko I. ; Ishikawa, Masayuki ; Bowers, John E.
engleski
Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers
The active-area dependence of the threshold current density of GaInAsP/InP vertical-cavity lasers at various temperatures is measured. The threshold current density was found to increase monotonically with increasing active area, with the effect becoming more pronounced at higher temperature. This phenomenon is due to nonuniform current injection into the active region.
carrier injection ; indium gallium arsenides ; indium phosphides ; laser cavities ; surface emitting lasers ; carrier density (solid state) ; current density ; p-type semiconductors ; temperature dependence ; threshold currents
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