engleski

144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates

We report lasing at temperatures as high as 144 °C in long‐wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter‐wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at room temperature to 81 K at temperatures above 80 °C as the gain peak moves into resonance with the longer wavelength cavity mode.

III-V semiconductors ; laser resonators ; optical devices ; optical resonators ; mirrors

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