Low threshold, wafer fused long wavelength vertical cavity lasers (CROSBI ID 240780)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Dudley, J.J. ; Babić, Dubravko I. ; Mirin, R. ; Yang, L. ; Miller, B. I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E.
engleski
Low threshold, wafer fused long wavelength vertical cavity lasers
We demonstrate electrically injected InGaAsP (1.3 μm) vertical cavity lasers (VCLs) fabricated on GaAs substrates and employing GaAs/AlAs mirrors. The technique of wafer fusion allows for integration of GaAs/AlAs mirrors with InP double heterostructures without degradation of device performance, despite a 3.7% lattice mismatch between the wafers. The wafer fused VCLs have the lowest threshold current (9 mA) and lowest threshold current density (9.5 kA/cm2) and the highest characteristic temperature (T0=67 K) reported to date of any room‐temperature long wavelength VCL.
III-V semiconductors ; mirrors ; laser resonators ; current density ; electrical properties
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