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High-temperature pulsed operation of InGaAsP/InP surface emitting lasers (CROSBI ID 240939)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G. High-temperature pulsed operation of InGaAsP/InP surface emitting lasers // IEEE transactions on electron devices, 38 (1991), 12; 2701-2701. doi: 10.1109/16.158721

Podaci o odgovornosti

Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.

engleski

High-temperature pulsed operation of InGaAsP/InP surface emitting lasers

The observation of above- room-temperature pulsed operation of InGaAsP/InP vertical-cavity surface emitting lasers (VCSELs) is reported. Lasing operation was successfully achieved up to temperatures as high as 66 degrees C. The threshold current at 20 degrees C was only 50 mA, which is much lower than that previously reported (150 mA) for VCSELs in this material system. The VCSEL structure is the polyimide-embedded constricted mesa structure with an undercut active layer formed using a selective chemical etchant.

Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Optical pulses, Temperature, Threshold current, Optical materials, Etching, Chemical lasers, Epitaxial growth

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Podaci o izdanju

38 (12)

1991.

2701-2701

objavljeno

0018-9383

10.1109/16.158721

Povezanost rada

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