High-temperature pulsed operation of InGaAsP/InP surface emitting lasers (CROSBI ID 240939)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.
engleski
High-temperature pulsed operation of InGaAsP/InP surface emitting lasers
The observation of above- room-temperature pulsed operation of InGaAsP/InP vertical-cavity surface emitting lasers (VCSELs) is reported. Lasing operation was successfully achieved up to temperatures as high as 66 degrees C. The threshold current at 20 degrees C was only 50 mA, which is much lower than that previously reported (150 mA) for VCSELs in this material system. The VCSEL structure is the polyimide-embedded constricted mesa structure with an undercut active layer formed using a selective chemical etchant.
Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Optical pulses, Temperature, Threshold current, Optical materials, Etching, Chemical lasers, Epitaxial growth
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Podaci o izdanju
38 (12)
1991.
2701-2701
objavljeno
0018-9383
10.1109/16.158721
Povezanost rada
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