Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates (CROSBI ID 240942)
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Podaci o odgovornosti
Chabak, K.D. ; Gillespie, J.K. ; Miller, V. ; Crespo, A. ; Roussos, J. ; Trejo, M. ; Walker, D.E. ; Via, G.D. ; Jessen, G.H. ; Wasserbauer, J. ; Faili, F. ; Babić, Dubravko I. ; Francis, D. ; Ejeckam, F.
engleski
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates
We report on electrical characterization and uniformity measurements of the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs) on free-standing chemical-vapor-deposited (CVD) diamond substrate wafers.
Aluminum gallium nitride, Gallium nitride, HEMTs, MODFETs, Substrates, Electric variables measurement, Chemical processes, Chemical vapor deposition, Radio frequency
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