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Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates (CROSBI ID 240942)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Chabak, K.D. ; Gillespie, J.K. ; Miller, V. ; Crespo, A. ; Roussos, J. ; Trejo, M. ; Walker, D.E. ; Via, G.D. ; Jessen, G.H. ; Wasserbauer, J. et al. Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates // IEEE electron device letters, 31 (2010), 2; 99-101. doi: 10.1109/LED.2009.2036574

Podaci o odgovornosti

Chabak, K.D. ; Gillespie, J.K. ; Miller, V. ; Crespo, A. ; Roussos, J. ; Trejo, M. ; Walker, D.E. ; Via, G.D. ; Jessen, G.H. ; Wasserbauer, J. ; Faili, F. ; Babić, Dubravko I. ; Francis, D. ; Ejeckam, F.

engleski

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates

We report on electrical characterization and uniformity measurements of the first conventionally processed AlGaN/GaN high electron mobility transistors (HEMTs) on free-standing chemical-vapor-deposited (CVD) diamond substrate wafers.

Aluminum gallium nitride, Gallium nitride, HEMTs, MODFETs, Substrates, Electric variables measurement, Chemical processes, Chemical vapor deposition, Radio frequency

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Podaci o izdanju

31 (2)

2010.

99-101

objavljeno

0741-3106

10.1109/LED.2009.2036574

Povezanost rada

nije evidentirano

Poveznice
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