Frequency performance enhancement of AlGaN/GaN HEMTs on diamond (CROSBI ID 240943)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Diduck, Q. ; Felbinger, J. ; Eastman, L.F. ; Francis, D. ; Wasserbauer, J. ; Faili, F. ; Babić, Dubravko I. ; Ejeckam, F.
engleski
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
The performance of an AlGaN/GaN high electron mobility transistor (HEMT) on diamond substrate is reported. Presented is a device with a gate footprint LG =40 nm and a periphery WG = 100 mum that exhibits fT = 85 GHz and fmax = 95 GHz. It is believed that this represents the best frequency performance of a GaN-on-diamond HEMT.
III-V semiconductors, aluminium compounds, gallium compounds, high electron mobility transistors
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