Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates (CROSBI ID 240946)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Dudley, J.J. ; Babić, Dubravko I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E.
engleski
Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates
Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 um) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm/sup 2/. These devices operate CW (continuous wave) at temperatures as high as 230 K ; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection.
Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o izdanju
40 (11)
1993.
2119-2120
objavljeno
0018-9383
10.1109/16.239794
Povezanost rada
nije evidentirano