Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers (CROSBI ID 650342)
Prilog sa skupa u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Reynolds, T.E. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.
engleski
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room- temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.
Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
xx-yy.
1991.
nije evidentirano
objavljeno
Podaci o matičnoj publikaciji
1041-1135
Podaci o skupu
Annual Device Research Conference (IEEE) (49 ; 1991)
predavanje
17.06.1991-19.06.1991
Boulder (CO), Sjedinjene Američke Države