Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers (CROSBI ID 650356)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Wada, H. ; Babić, Dubravko I. ; Crawford, D.L. ; Reynolds, T.E. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.
engleski
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Room-temperature pulsed operation of InGaAsP (1.3 um)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room- temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.
Indium phosphide, Vertical cavity surface emitting lasers, Surface emitting lasers, Etching, Temperature, Threshold current, Optical pulses, Chemical lasers, Gallium arsenide, Electrodes
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Podaci o prilogu
SDL4.6
1991.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the Annual Meeting Digest IEEE Lasers and Electro-Optics Society 1991
Podaci o skupu
Annual Meeting Digest IEEE Lasers and Electro-Optics Society 1991
predavanje
01.01.1991-01.01.1991
San Jose (CA), Sjedinjene Američke Države
