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Refractive Index of AlGaInAs on InP for Optoelectronic Applications

Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al, Ga, In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al, Ga, In)As films as a function of wavelength. The measured data were fitted to a single- oscillator dispersion model, and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.

Refractive index, Indium phosphide, Molecular beam epitaxial growth, Optical waveguides, Superlattices, Lattices, Diffraction, Photoluminescence, Optical reflection, Spectroscopy

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