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Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates (CROSBI ID 650429)

Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija

Dudley, J.J. ; Babic, D.I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E. Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates // Proceedings of the IEEE 51st Device Research Conference post deadline paper IIIB-8. 1993

Podaci o odgovornosti

Dudley, J.J. ; Babic, D.I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E.

engleski

Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates

Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 mu m) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm/sup 2/. These devices operate CW (continuous wave) at temperatures as high as 230 K ; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection.

Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions

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Podaci o prilogu

1993.

objavljeno

Podaci o matičnoj publikaciji

Proceedings of the IEEE 51st Device Research Conference post deadline paper IIIB-8

Podaci o skupu

IEEE 51st Device Research Conference

predavanje

01.01.1993-01.01.1993

Santa Barbara (CA), Sjedinjene Američke Države

Povezanost rada

Povezane osobe




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