Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates (CROSBI ID 650429)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Dudley, J.J. ; Babic, D.I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E.
engleski
Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 mu m) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm/sup 2/. These devices operate CW (continuous wave) at temperatures as high as 230 K ; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection.
Gallium arsenide, Vertical cavity surface emitting lasers, Mirrors, Surface emitting lasers, Threshold current, Temperature, Quantum well lasers, Dielectric substrates, Indium phosphide, Laser transitions
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Podaci o prilogu
1993.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the IEEE 51st Device Research Conference post deadline paper IIIB-8
Podaci o skupu
IEEE 51st Device Research Conference
predavanje
01.01.1993-01.01.1993
Santa Barbara (CA), Sjedinjene Američke Države