Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates (CROSBI ID 650433)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Dudley, J. J. ; Babić, D. I. ; Mirin, R. P. ; Yang, L. ; Miller, B. I. ; Hu, E. L. ; Bowers, J. E.
engleski
Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 /spl mu/m) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 /spl mu/m diameter devices is 67 K at room temperature.
Laser modes, Mirrors, Gallium arsenide, Bandwidth, Indium phosphide, Dielectric substrates, Fiber lasers, Etching, Temperature distribution, Reflectivity
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Podaci o prilogu
1994.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 6th International Conference on InP and Related Materials paper WA3
Podaci o skupu
6th International Conference on InP and Related Materials
predavanje
28.03.1994-31.03.1994
Santa Barbara (CA), Sjedinjene Američke Države
