Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces (CROSBI ID 650434)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Tan, I-H. ; Reaves, C. ; Dudley, J. J. ; Holmes Jr., A. L. ; Babić, D. I. ; Hu, E. L. ; Bowers, J. E. ; DenBaars, S.
engleski
Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces
We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.
Bonding, Indium phosphide, Optical materials, Gallium arsenide, Optical microscopy, Solid state circuits, Ohmic contacts, Scanning electron microscopy, Electron optics, Reflectivity
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Podaci o prilogu
1994.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 6th International Conference on InP and Related Materials paper ThG4
Podaci o skupu
6th International Conference on InP and Related Materials
predavanje
28.03.1994-31.03.1994
Santa Barbara (CA), Sjedinjene Američke Države
