Nalazite se na CroRIS probnoj okolini. Ovdje evidentirani podaci neće biti pohranjeni u Informacijskom sustavu znanosti RH. Ako je ovo greška, CroRIS produkcijskoj okolini moguće je pristupi putem poveznice www.croris.hr
izvor podataka: crosbi !

Wafer bonding of InP and GaAs: Interface characterization and device applications (CROSBI ID 650437)

Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija

Yang, L. ; Carey, K. ; Ludowise, M. ; Perez, W. ; Mars, D. E. ; Fouquet, J. ; Nauka, K. ; Rosner, S. J. ; Ram, R. J. ; Dudley, J. J. et al. Wafer bonding of InP and GaAs: Interface characterization and device applications // Proceedings of the 6th International Conference on InP and Related Materials paper MP36. 1994

Podaci o odgovornosti

Yang, L. ; Carey, K. ; Ludowise, M. ; Perez, W. ; Mars, D. E. ; Fouquet, J. ; Nauka, K. ; Rosner, S. J. ; Ram, R. J. ; Dudley, J. J. ; Babić, D. I. ; Bowers, J. E.

engleski

Wafer bonding of InP and GaAs: Interface characterization and device applications

Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 /spl mu/m away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained.

Wafer bonding, Indium phosphide, Gallium arsenide, III-V semiconductor materials, Optical materials, Electron beams, Solids, Spectroscopy, Photoluminescence, Optical reflection

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

nije evidentirano

Podaci o prilogu

1994.

objavljeno

Podaci o matičnoj publikaciji

Proceedings of the 6th International Conference on InP and Related Materials paper MP36

Podaci o skupu

6th International Conference on InP and Related Materials

predavanje

28.03.1994-31.03.1994

Santa Barbara (CA), Sjedinjene Američke Države

Povezanost rada

Povezane osobe




nije evidentirano