Wafer bonding of InP and GaAs: Interface characterization and device applications (CROSBI ID 650437)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Yang, L. ; Carey, K. ; Ludowise, M. ; Perez, W. ; Mars, D. E. ; Fouquet, J. ; Nauka, K. ; Rosner, S. J. ; Ram, R. J. ; Dudley, J. J. ; Babić, D. I. ; Bowers, J. E.
engleski
Wafer bonding of InP and GaAs: Interface characterization and device applications
Wafer bonding is a technique used to form a single hybrid solid from dissimilar materials by rearrangement of surface bonds. While the bonding of silicon-related material has been studied extensively, very little work was devoted to the III-V material system. We have successfully bonded InP and GaAs. In spite of the 3.7% lattice-mismatch, excellent material quality can be preserved less than 0.2 /spl mu/m away from the bonded interface. Transmission electron micrograph (TEM), deep level transient spectroscopy (DLTS), electron beam induced current (EBIC), photoluminescence (PL) and optical reflection measurements were used to characterize the bonded interface, and consistent results were obtained.
Wafer bonding, Indium phosphide, Gallium arsenide, III-V semiconductor materials, Optical materials, Electron beams, Solids, Spectroscopy, Photoluminescence, Optical reflection
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Podaci o prilogu
1994.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 6th International Conference on InP and Related Materials paper MP36
Podaci o skupu
6th International Conference on InP and Related Materials
predavanje
28.03.1994-31.03.1994
Santa Barbara (CA), Sjedinjene Američke Države