Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon (CROSBI ID 650438)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Schramm, J. E. ; Babić, D. I. ; Hu, E. L. ; Bowers, J.E. ; Merz, J. L.
engleski
Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon
This paper contrasts the various uses of oxygen in methane/hydrogen/argon (O/sub 2/:MHA) RIE, in continuous or cyclical processes, for etching deep structures (>5 /spl mu/m). In particular, we show its application to long wave, InGaAsP/InP mirrors for vertical cavity surface emitting laser structures (VCSELs).
Anisotropic magnetoresistance, Indium phosphide, Oxygen, Hydrogen, Argon, Polymers, Vertical cavity surface emitting lasers, Plasma applications, Sputter etching, Mirrors
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Podaci o prilogu
1994.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 6th International Conference on InP and Related Materials paper WE4
Podaci o skupu
6th International Conference on InP and Related Materials
predavanje
28.03.1994-31.03.1994
Santa Barbara (CA), Sjedinjene Američke Države
