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Modeling and optimization of 1.54 m double-fused VCSELs for cw operation above room temperature (CROSBI ID 650446)

Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija

Piprek, J. ; Babić, D. I. ; Bowers, J. E. Modeling and optimization of 1.54 m double-fused VCSELs for cw operation above room temperature // Proceedings of the SPIE 1996, Physics and Simulation of Optoelectronic Devices IV, vol. 2693 / Chow, W. W. ; Osinski, M. A. (ur.). 1996

Podaci o odgovornosti

Piprek, J. ; Babić, D. I. ; Bowers, J. E.

engleski

Modeling and optimization of 1.54 m double-fused VCSELs for cw operation above room temperature

Recently, continuous wave (cw) operation of 1.54 micrometer vertical-cavity surface- emitting lasers (VCSELs) up to 33 degrees Celsius ambient temperature has been demonstrated for the first time. These devices employ strain-compensated InGaAsP multi-quantum wells and GaAs/AlGaAs distributed Bragg reflectors that are fused on both sides of the InP spacer. Lasing operation of those double- fused lasers is analyzed using a comprehensive numerical model including thermal finite element simulation, optical transfer matrix analysis, and a k(DOT)p band structure calculations. The simulation of pulsed laser performance measured at different temperatures delivers internal laser parameters. Intervalenceband absorption is found to be the dominating loss mechanism that prevents lasing at higher temperatures. The thermal conductivity of the multilayer mirror is only 33% of the value expected. Optimized lasers with reduced gain offset and with smaller pillar heat generation are simulated exhibiting lasing at higher temperatures. Improved heat sinking by top-down mounting shows the strongest impact leading to cw operation up to 62 degrees Celsius.

Double-fused VCSELs

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Podaci o prilogu

1996.

objavljeno

Podaci o matičnoj publikaciji

Proceedings of the SPIE 1996, Physics and Simulation of Optoelectronic Devices IV, vol. 2693

Chow, W. W. ; Osinski, M. A.

Podaci o skupu

SPIE 1996, Physics and Simulation of Optoelectronic Devices IV

predavanje

27.01.1996-27.01.1996

San Jose (CA), Sjedinjene Američke Države

Povezanost rada

Povezane osobe




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