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GaN-HEMT Epilayers on Diamond Substrates: Recent Progress

Gallium-nitride high-electron-mobility transistors fabricated on diamond substrates are highly desired for use in high-power amplifiers for XBand radar systems and commercial cellular-base stations. Diamond substrates have high thermal conductivity which enables highly efficient removal of heat from the active device regions. This paper describes our progress towards manufacturability of commercial-grade galliumnitride-transistor epilayers on diamond substrates. We report on the fabrication of the thickest (100 μm) and largest (4”) GaN-onDiamond composite wafers to date and show selected material haracterization results.

Gallium nitride, diamond, high-electron mobility transistors, X-Band, power, thermal management

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