Comparison of GaN HEMTs on Diamond and SiC Substrates (CROSBI ID 650488)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Felbinger, J.G. ; Chandra, M.V.S. ; Sun, Y. ; Eastman, L.F. ; Wasserbauer, J. ; Faili, F. ; Babić, D. ; Francis, D. ; Ejeckam, F.
engleski
Comparison of GaN HEMTs on Diamond and SiC Substrates
The performance of AlGaN/GaN high-electron- mobility transistors (HEMTs) on diamond and SiC substrates is examined. We demonstrate GaN-on- diamond transistors with periphery WG = 250 mum, exhibiting ft = 27.4 GHz and yielding a power density of 2.79 W/mm at 10 GHz. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. To the best of our knowledge, these represent the highest frequency of operation and first-reported thermal and X -band power measurements of GaN-on-diamond HEMTs.
Gallium nitride, HEMTs, MODFETs, Silicon carbide, Substrates, Thermal conductivity, Aluminum gallium nitride, Temperature, Atomic force microscopy, Epitaxial layers
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Podaci o prilogu
2007.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits
Podaci o skupu
31th Workshop on Compound Semiconductor Devices and Integrated Circuits
predavanje
20.05.2007-23.05.2007
Venecija, Italija