Materials Characterization Comparison of GaN HEMT- on-Diamond Layers Pre- and Post-Attachment (CROSBI ID 650493)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Carlin, J. ; Jessen, G. ; Gillespie, J. ; Tomich, D. ; Francis, D. ; Wasserbauer, J. ; Faili, F. ; Babić, D. ; Ejeckam, F.
engleski
Materials Characterization Comparison of GaN HEMT- on-Diamond Layers Pre- and Post-Attachment
Atomic attachment of GaN high-electron mobility transistor epilayers to synthetic diamond is a novel technology for thermal management and reduction of RF losses in these transistors. Material characterization of GaN epilayers prior and after the atomic attachment is presented.
Materials ; Diamond ; Transistors
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Podaci o prilogu
2008.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the CS MANTECH Conference
Podaci o skupu
CS MANTECH Conference
predavanje
14.04.2008-17.04.2008
Chicago (IL), Sjedinjene Američke Države