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Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance

This paper discusses the result of work by Raytheon and Group4 Labs to compare performance between GaN HEMTs and a GaN MMIC when fabricated on silicon carbide and diamond substrates. Wafers were fabricated and the performance of the epi, process coupons, and individual FETs are compared. We also report on the design, fabrication, and performance of a GaN on Diamond MMIC power amplifier, the first of its kind to the knowledge of the authors.

GaN on Diamond, Diamond, GaN, MMIC

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