engleski

Diamond cools high-power transistors

Synthetic chemical vapor deposition (CVD) grown polycrystalline diamond has effective used for cooling high-power transistors. The polycrystalline diamond thin film is inserted underneath a GaN HEMT that can reduce the transistor's operating temperature and substantially increase its maximum output power. It is required to establish the optimal process for managing the intrinsic diamond stress and the large difference in thermal expansion coefficients between various materials lead to lower wafer bow. GaN epilayer that are grown on silicon or attached to diamond are under tension at any low processing temperature, because GaN's thermal expansion coefficient is larger than that of silicon or diamond. The transistors are expected to improve and emphasize the benefit of the highly conductive composite as the quality of GaN-on- diamond wafer improves.

Synthetic chemical vapor deposition ; Polycrystalline diamonds

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