3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C (CROSBI ID 650699)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Ejeckam, F. ; Babić, D. I. ; Faili, F. ; Francis, D. ; Lowe, F. ; Twitchen, D. ; Bollinger, B.
engleski
3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C
The authors report for the first time the observation of GaN-on-Diamond HEMTs each operating continuously at channel temperatures of 290°C and 350°C for 9, 000+ hrs and 3, 000+ hrs respectively per HEMT. No catastrophic failures were observed whereas all the control GaN-on-Si HEMTs exhibited catastrophic failures.
Gallium nitride, HEMTs, MODFETs, Diamonds, Logic gates, Temperature measurement, Aluminum gallium nitride
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Podaci o prilogu
242-246.
2014.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)
Podaci o skupu
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)
predavanje
09.03.2014-13.03.2014
San Jose (CA), Sjedinjene Američke Države
