Diamond for enhanced GaN device performance (CROSBI ID 650700)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Ejeckam, F. ; Francis, D. ; Faili, F. ; Dodson, J. ; Twichen, D. J. ; Bollinger, B. ; Babic, D.
engleski
Diamond for enhanced GaN device performance
AlGaN/GaN high electron mobility transistors (HEMT) semiconductor technology holds promise for revolutionary improvements in the cost, size, weight, and performance of a broad range of military and commercial microelectronics [1]. However, exploiting the true capabilities of GaN is a compromise between the desired RF performance and the realities of current thermal solutions. In this work we present modeling and integration details on performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated on freestanding and mounted, heat-spreading diamond substrates. The excellent thermal properties of diamond substrates grown by chemical vapor deposition (CVD) provide a superior heat spreading material for electronic packages. The successful on-wafer integration of diamond with gallium nitride (GaN) has emerged as a critical solution for the expected thermal challenges of the next generation of high power RF and microwave devices.
Thermal resistance, Gallium nitride, Thermal conductivity, HEMTs, Diamonds, Substrates
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Podaci o prilogu
1206-1209.
2014.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 2014 IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
Podaci o skupu
IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
predavanje
01.01.2014-01.01.2014
Orlando (FL), Sjedinjene Američke Države