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A simplified quantum energy-transport model for semiconductors (CROSBI ID 193611)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Juengel, Ansgar ; Milišić, Josipa Pina A simplified quantum energy-transport model for semiconductors // Nonlinear analysis: real world applications, 12 (2011), 2; 1033-1046. doi: 10.1016/j.nonrwa.2010.08.026

Podaci o odgovornosti

Juengel, Ansgar ; Milišić, Josipa Pina

engleski

A simplified quantum energy-transport model for semiconductors

The existence of global-in-time weak solutions to a quantum energy-transport model for semiconductors is proved. The equations are formally derived from the quantum hydrodynamic model in the large-time and small- velocity regime. They consist of a nonlinear parabolic fourth-order equation for the electron density, including temperature gradients ; an elliptic nonlinear heat equation for the electron temperature ; and the Poisson equation for the electric potential. The equations are solved in a bounded domain with periodic boundary conditions. The existence proof is based on an entropy-type estimate, exponential variable transformations, and a fixed-point argument. Furthermore, we discretize the equations by central finite differences and present some numerical simulations of a one-dimensional ballistic diode.

Quantum energy-transport equations; quantum semiconductors; existence of solutions; parabolic nonlinear fourth-order equation

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Podaci o izdanju

12 (2)

2011.

1033-1046

objavljeno

1468-1218

10.1016/j.nonrwa.2010.08.026

Povezanost rada

Matematika

Poveznice
Indeksiranost