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Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon (CROSBI ID 86415)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Rakvin, Boris ; Pivac, Branko ; Tonini, R. ; Corni, F. ; Ottaviani, G. Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 170 (2000), 1-2; 125-133. doi: 10.1016/S0168-583X(00)00078-1

Podaci o odgovornosti

Rakvin, Boris ; Pivac, Branko ; Tonini, R. ; Corni, F. ; Ottaviani, G.

engleski

Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon

Electron paramagnetic resonance spectra of S2 paramagnetic center in float zone silicon (FZ-Si) and Czochralski silicon (CZ-Si) produced by H2+ ion-implantation and by subsequent annealing have been studied. At room temperature the spectrum exhibits an isotropic line g=2.0066+/-0.0002, which, then broadens and transforms in a complex spectrum at 120 K. This spectrum can be decomposed into isotropic and anisotropic component. The relative concentration of anisotropic component is larger in CZ-Si and smaller in FZ-Si than the respective isotropic component. The g tensor evaluated from the anisotropic component at 120 K shows that the spectrum originated from the center with trigonal symmetry. The involvement of hydrogen and oxygen atoms in the center has been discussed. It is suggested that the S2 center is developed in the multi-vacancy defect containing oxygen and hydrogen atoms. From reversible thermal effect of the linewidth narrowing the motional properties of the dangling bond in the S2 center is described by the activation energy of 0.03 eV.

silicon; defects; hydrogen; ion implantation; electron paramagnetic resonance

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Podaci o izdanju

170 (1-2)

2000.

125-133

objavljeno

0168-583X

1872-9584

10.1016/S0168-583X(00)00078-1

Povezanost rada

Fizika, Kemija

Poveznice
Indeksiranost