engleski

EPR study of a-Si structural relaxation

A detailed analysis of the EPR line-shape was performed on amorphous silicon (a-Si) saamples obtained by Kr+ ion implantation. It is shown that the line has predominantly Lorentzian character, however, a small Gaussian component is present as well. We monitored line-shape bahavior during the relaxation and subsequent derelaxation process. A strong fourfold increase in Gaussian component has been observed upon structural relaxation, suggesting spin homogenization throughout the bulk. Subsequent ion implantation derelaxation caused gradual return of the Lorentzian character, i.e. cluster structure of the amorphous phase.

amorphous silicon; ion beam amorphisation; structural relaxation; electron paramagnetic resonance

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