Small angle X-ray scattering study of oxygen precipitation in silicon (CROSBI ID 101082)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Pivac, Branko ; Dubček, Pavo ; Bernstorff, Sigrid ; Borghesi, Alessandro ; Sassella, Adele ; Porrini, Maria
engleski
Small angle X-ray scattering study of oxygen precipitation in silicon
Czochralski-grown dislocation-free silicon is used in the semiconductor industry almost exclusively for manufacturing VLSI devices. Such material contains small quantities (~ 20 ppm) of dissolved oxygen, which can have a crucial effect on the properties of produced devices. Therefore it is of great importance to study its precipitation in a silicon matrix after given thermal treatment. The small angle X-ray scattering (SAXS) technique was used to study oxygen precipitation in monocrystalline silicon samples. We used 8 and 16 keV radiation to overcome the high absorption at low energies. A series of samples has been prepared with controlled sequence of oxygen nucleation and precipitation phase and measured with SAXS. It is shown that this low contrast changes in standard wafers can be investigated using synchrotron radiation.
silicon; defects; oxygen; SAXS
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o izdanju
200
2003.
105-109-x
objavljeno
0168-583X