engleski

Interstitial defects in ion-implanted Si

We present a study of defect states occurring in boron-doped p-type CZ Si(100) after high dose C+ ion implantation and subsequent thermal annealing. Deep level transient spectroscopy (DLTS) was used to identify the electrical active defects. It is shown that the predominant defect created during the implantation is related to Si selfinterstitial clusters. Upon annealing DLTS spectra were dominated by the peaks associated with the interstitial-related defect state Ci-Oi, H(0.36). Above ~650 °C the concentration of defects is reduced and the broad shoulder in spectra is observed, a feature typical of an extended defect. It is associated with rod-like {; ; ; ; ; ; ; 311}; ; ; ; ; ; ; extended defects which are known to supply the interstitials responsible for TED of B in Si. DLTS measurements were used to monitor the transition from small interstitial clusters to extended defects that occur upon increasing the annealing temperature

Silicon ; Ion implantation ; Defects ; DLTS ; Interstitial

Proceedings of the 9th Joint Vacuum Conference (JVC-9), organised by the Austrian Vacuum Society, in cooperation with the Vacuum societies of Hungary, Croatia, Slovenia, Czech Republic, Slovakia and Italy, Schloss Seggau, Austria