engleski

Ionized donor bound excitons in GaN

The temperature and excitation power dependence of a bound exciton photoluminescence line S with a localization energy Q = 11.5 meV has been studied in undoped and moderately Mg-doped wurtzite GaN of high resistivity. The data provide strong evidence that line S is due to recombination of excitons bound to ionized shallow donors. The consistency of this assignment with theoretical predictions is demonstrated.

GaN ; excitons ; photoluminescece

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