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Thermally Stimulated Currents on InSe Semiconductor

Polycrystalline samples of InSe are obtained by syntesis in vacuum at 850 C. In order to determine defects in forbidden enery gap we have measured thermally stimulated currents (TSC) on InSe samples in temperature interval between 80 and 400 K. Energy of deep level defect was calculated as ET=(0.65+-0.02) eV, which is in agreement with previous result of DLTS of 0.64 eV. Configuration model of such deep level defect is to be further investigated.

Thermally Stimulated Currents; semiconductor; InSe

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