High energy resolution PIXE analysis using focused MeV heavy ion beams (CROSBI ID 81231)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Mokuno, Y. ; Horino, Y. ; Tadić, Tonči ; Terasawa, M. ; Sekioka, T. ; Chayahara, A. ; Kinomura, A. ; Tsubouchi, N. ; Fujii, K.
engleski
High energy resolution PIXE analysis using focused MeV heavy ion beams
The possibility of chemical state microanalysis using high energy resolution PIXE was investigated using a plane crystal spectrometer installed at a heavy ion microbeam line. The spectrometer has the advantage for the analysis of an X-ray spectrum of simultanously detecting X-rays over an energy range using position sensitive proportional counter without scanning the crystal. Though the detection efficiency is estimated to be at least four orders of magnitude lower than energy dispersive X-ray spectroscopy (EDS) using a Si(Li) detector, the resulution of the system (dE/E) is better than 10^-3, because the effect of beam size on system resolution is negligible. Focused 2 MeV proton and 5 MeVSi^3+ ion beams were employed for the analysis of SiKalpha X-rays of Si and SiO_2. In both cases, it is possible to detect chemical effects by observing relative intensities of X-rays satellite peaks. However, the use of heavy ions is considered to be more promising because the yields of satellite lines using silicon ion bombardment was mush higher than that ot protons.
High energy resolution pixe. Heavy ion microbeam
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Podaci o izdanju
138
1998.
368-372
objavljeno
0168-583X