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Self-organized growth of Ge islands on Si (100) substrates (CROSBI ID 123805)

Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija

Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, S. ; Slaoui, A. Self-organized growth of Ge islands on Si (100) substrates // Thin solid films, 511-512 (2006), 153-156. doi: 10.1016/j.tsf.2005.12.089

Podaci o odgovornosti

Pivac, Branko ; Kovačević, Ivana ; Dubček, Pavo ; Radić, Nikola ; Bernstorff, S. ; Slaoui, A.

engleski

Self-organized growth of Ge islands on Si (100) substrates

We present a structural analysis of Ge islands on Si(100) substrates using grazing-incidence small-angle X-ray scattering (GISAXS). GISAXS is a nondestructive and powerful technique for structural characterization of islands fabricated on a substrate. From the GISAXS pattern it is possible to determine the size, the shape, the inter-island distance and the size distribution of islands. In this work, the samples were prepared with high-vacuum evaporation of a 10nm thick Ge layer on Si(100) substrate heated at 200  C. The samples were annealed at 500 - 700 °C for 1h in vacuum, yielding to island formation. The implementation of such Ge islands into silicon solar cells is proposed.

germanium ; nanostructures ; solar cells ; grazing incidence X-ray scattering ; atomic force microscopy

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Podaci o izdanju

511-512

2006.

153-156

objavljeno

0040-6090

1879-2731

10.1016/j.tsf.2005.12.089

Povezanost rada

Fizika

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