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Influence of disorder on the optical absorption edge in (GaXIn1-x)2Se3 semiconducting compounds

The absorption edge in (GaxIn1-x)2Se3 monocrystalline semiconducting compounds, in the In rich region, has been analyzed within the Einstein single oscillator model. The absorption coefficient in all of the studied crystals exhibited exponential dependence on photon energy in the 1.9 to 2.3 eV range, following the Urbach rule. The influence of thermal disorder, at room temperature, was dominating the static disorder, which resulted from the disordered system of inherent vacancies and compositional disorder, induced by an interchange of In atoms with Ga atoms as the composition ratio x is being changed. Characteristic system parameters, important for optical characterization of the material, have been determined by fitting the theoretical expressions to the experimental points.

III-V semiconducting compounds; optical absorption edge

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