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Quantitative analysis of a-Si1-xCx thin films

The amorphous hydrogenated silicon crbide thin films (a-Si1-xCx:H)were deposited by magnetron sputtering sourceonto glass and mono-crystalline substrate. Carbon was introduced into the film by adding the benzene vapour into the Argon-hydrogen gas mixture, with partial pressure variation between 0 and 30%. The composition of obtained a-Si1-xCx films was measured by Auger spectroscop, RBS (Routherford Back Scattering), ERDA (Elastic Recoil Detection Analysis)and FTIR spectroscopy. ERDA and RBS analyses were performed simultaneously using a 2 MeV alpha particle beam from the NUS Van se Graaff accelerator. Sample was positioned to the grazing angle incidence of the beam. The ERDA detector positioned in the forward angle had a mylar stopper foil to prevent detection of forward scattered particles. The depth profiles by Auger spectroscopy were determinated by successivemeasurements after Ar ion sputtering events, performed under low angle. In the case of RBS and ERDA, depth profiles were determined by simulation of recoil particle energy spectra.The spatial resolution of applied methods and reliability in determination of total concentration of silicon, carbon, hydrogen and oxigen is discused.

quantitative analysis; amorphous silicon carbide; IR; ERDA; RBS; Auger

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