Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers (CROSBI ID 682715)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Knezevic, Tihomir ; Suligoj, Tomislav ; Nanver, Lis K.
engleski
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers
Pure amorphous boron (PureB) deposition on Si is used to fabricate ultrashallow low- saturation-current p+n-like diodes even at process temperatures where the boron is not expected to diffuse into the bulk Si. It has been proposed that the bonding of the B atoms to the Si creates a monolayer of fixed negative charge that attracts holes to the interface. In this paper, an investigation using semiconductor simulation tools is performed starting from an all-Si test structure where suppression of electron injection from an n-Si bulk was achieved by introducing a large concentration of negative fixed charge that attracts holes to the interface between a thin- film top-layer and the bulk. This introduces a barrier which lowers the electron saturation current density of the simulated diode to become comparable to or lower than the saturation current density of holes injected into the bulk. The material properties of the top-layer such as electron mobility and tunneling mass, bandgap and electron affinity are individually varied from default Si-values to values typical for amorphous boron layers indicating that a critical concentration of negative fixed charge is always needed for suppression of the electron injection.
Carrier injection, Negative fixed interface charge, Pure amorphous boron, PureB, TCAD, Ultra-thin-layer
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Podaci o prilogu
24-29.
2019.
objavljeno
10.23919/mipro.2019.8757156
Podaci o matičnoj publikaciji
Opatija: Institute of Electrical and Electronics Engineers (IEEE)
978-1-5386-9296-7
2623-8764
Podaci o skupu
MIPRO 2019
predavanje
20.05.2019-24.05.2019
Opatija, Hrvatska
Povezanost rada
Elektrotehnika, Interdisciplinarne prirodne znanosti, Interdisciplinarne tehničke znanosti