Application and Development of the LPCVD Process on Ruđer Bošković Institute (CROSBI ID 489139)
Prilog sa skupa u zborniku | stručni rad | međunarodna recenzija
Podaci o odgovornosti
Ivanda, M. ; Furić, K. ; Biljanović, P. ; Musić, S. ; Gotić, M. ; Gamulin, O. ; Gebavi, H. ; Magazin, K.
engleski
Application and Development of the LPCVD Process on Ruđer Bošković Institute
The growth of thin films by Chemical Vapour Deposition is one of the most important techniques for deposition of thin films in modern technology. The reasons of a broad application of the Low Pressure CVD method are in the possibility of deposition of different elements and compounds on relatively low temperatures in amorphous and crystalline phase with high degree of uniformity and purity. A simple handling, high reliability of operations, fast deposition, homogeneity of deposited layers and high reproducibility are the basic characteristics the LPCVD method. With a support of employees of former Factory for Semiconductor RIZ as well as of the Ministry of Science and Technology of Croatia the basis of the microelectronic technology was transferred to Ruđer Bošković Institute, where it was implemented and further developed. Here we will present some basic concepts of the LPCVD method and we will describe its implementation in development of new micro-electronic products - polysilicon thermal heater and nanosilicon laser.
LPCVD; thin film; polysilicon heater; nanosilicon laser
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Podaci o prilogu
29-34-x.
2003.
objavljeno
Podaci o matičnoj publikaciji
Proc. MIPRO 2003
Biljanović, Petar ; Skala, Karolj
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
Podaci o skupu
MIPRO 2003 26th International Convention
predavanje
19.05.2003-23.05.2003
Opatija, Hrvatska