UHV Se evaporation source: r.t. deposition on a clean V(110) surface (CROSBI ID 100404)
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Podaci o odgovornosti
Mandrino, Djordje ; Milun, Milorad ; Jenko, Monika
engleski
UHV Se evaporation source: r.t. deposition on a clean V(110) surface
A simple ultrahigh-vacuum-compatible Se deposition source is developed. It consists of resistively heated crucible enveloped by a copper tube that also has provisions for liquid nitrogen cooling. Temperature of the crucible is measured via a Ni/NiCr thermocouple. All feedthroughs are executed through a CF 70 mm OD flange, which enables the Se source to be mounted to different vacuum systems with appropriate flange and sample transport mechanism. The temperature for the onset of the Se evaporation is determined and calibration curves (i.e. Se coverage vs. deposition time) for different crucible temperatures above 420 K are measured by Auger electron spectroscopy. The influence of the Se source on the UHV residual gas system is virtually non-existent at operating temperatures below 480 K.
Selenium deposition; UHV; adsorption; V(110); HRAES; coverage
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