GISAXS study of structural relaxation in amorphous silicon (CROSBI ID 101080)
Prilog u časopisu | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Dubček, Pavo ; Pivac, Branko ; Bernstorff Sigrid ; Tonini, Rita ; Corni, Federico ; Ottaviani, Giampiero
engleski
GISAXS study of structural relaxation in amorphous silicon
The structural changes induced in single crystal silicon implanted with silicon ions above the amorphisation threshold were studied by Grazing Incidence Small Angle X-ray Scattering technique. Silicon samples were implanted with silicon ions at 30 keV to the dose of 5x1015 atoms/cm2. A well-defined layer of amorphous silicon, thick about 40 nm was formed below the surface. As implanted samples were subsequently relaxed by thermal annealing at 350 C. The analysis have shown that the amorphous layer exhibits a granular structure that develops with annealing. A model will be presented for the film structure changes obtained by data evaluation based on the distorted wave Born approximation.
amorphous silicon; defects; ion implantation; SAXS
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Podaci o izdanju
200
2003.
110-113-x
objavljeno
0168-583X