Turn-On Delay Time Jitter Measurement in Semiconductor Lasers (CROSBI ID 466200)
Prilog sa skupa u zborniku | izvorni znanstveni rad | međunarodna recenzija
Podaci o odgovornosti
Medved Rogina, Branka
engleski
Turn-On Delay Time Jitter Measurement in Semiconductor Lasers
The problem of evaluating statistical time properties and, in particular, the variance of the turn-on delay time in semiconductor lasers is presented. The results of GaAs diode laser time jitter measurement, as a part of a time-of-flight measurement system with a single-shot resolution of 40 ps, are presented. The results indicate that at fast injection currents, in excess of twice the laser threshold current, the laser turn-on delay time is above 1 ns and with jitter less than 40 ps giving minimum influence on the timing resolution of the measurement system.
turn-on; delay time; jitter; laser
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Podaci o prilogu
33-36-x.
1998.
objavljeno
Podaci o matičnoj publikaciji
Proceedings of the 21^st International Convention MIPRO'98. Conference on Microelectronics, Electronics and Electronic Technologies
Biljanović, Petar ; Skala, Karolj ; Ribarić, Slobodan ; Budin, Leo
Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO
Podaci o skupu
21st International Convention MIPRO '98
predavanje
18.05.1998-22.05.1998
Opatija, Hrvatska