engleski

Tungsten-carbon films prepared by reactive sputtering from argon-benzene discharges

Tungsten-carbon thin films have been deposited by reactive (Ar+C6H6) DC magnetron sputtering onto various substrates. Deposition onto glass, monocrystalline silicon, tantalum and stainless steel at room temperature yielded W-C films, having XRD patterns corresponding to the structure of heavily disordered W2C or WC(1-x) carbides. The samples deposited upon the Au or Cu folis were nanocrystalline cubic WC(1-x) with the grain size of 2.9 nm. Disordered tungsten-carbon films were stable up to 1200 oC. Microhardness of the films with disordered W2C phase was about 5-6 GPa while that of the films disordered WC(1-x) phase was about 17 GPa. The characteristics of films can be understood considering the effects of the incorporation of free carbon and/or carbon-hydrogen fragments into the tungsten carbide layer.

tungsten-carbon films; reactive sputtering technique; argon-benzene discharge; XRD patterns; stability of films; microhardness characterization

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