engleski

Infrared study of oxygen segregation at structural defects in polycrystalline silicon

We have studied oxygen- and carbon-doped multicrystalline silicon samples. It was shown that a significant part of the oxygen incorporated into the samples was accumulated at extended structural defects and therefore could not be quantified. Furthermore, we demonstrated that oxygen was accumulated in SiOx clusters, with x close to 1. This explains the changes in the IR spectrum of the samples after thermal annealing, related to the dissolution of such clusters.

polycrystalline silicon ; structural defects ; oxygen-doped silicon ; FT-IR spectroscopy

nije evidentirano