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EPR study of defect formation in H implanted and annealed CZ Si (CROSBI ID 23654)
Prilog u knjizi | izvorni znanstveni rad
Pivac, Branko ; Rakvin, Boris ; Corni, F. ; Tonini, R. ; Ottaviani, G.
EPR study of defect formation in H implanted and annealed CZ Si // Defects in electronic materials II / Michel, J ; Kennedy, T ; Wada, K et al. (ur.). Pittsburgh (PA): Materials Research Society, 1997. str. 293-298-x
Podaci o odgovornosti
Pivac, Branko ; Rakvin, Boris ; Corni, F. ; Tonini, R. ; Ottaviani, G.
engleski
EPR study of defect formation in H implanted and annealed CZ Si
EPR study of defect formation in H implanted and annealed CZ
silicon, hydrogen, ion implantation, defects, EPR
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
nije evidentirano
Podaci o prilogu
293-298-x.
objavljeno
Podaci o knjizi
Defects in electronic materials II
Michel, J ; Kennedy, T ; Wada, K ; Thonke, K.
Pittsburgh (PA): Materials Research Society
1997.
1-55899-346-0
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