engleski

Scaling Properties of Vertical Silicon-on-Nothing (SON) MOSFETs

The scaling properties of a novel Vertical Fully Depleted Silicon-on-Nothing (VFDSONFET) structure are examined by means of device simulations. It is shown that the structure can be scaled down to 30 nm channel length with the threshold voltage roll-off (*Vt) under 100 mV, subthreshold slope (S) of 83 mV/dec, and drain induced barrier lowering (DIBL) of 98 mV/V, assuming a gate oxide thickness of 2.5 nm and a vacuum under the silicon body region. The short channel effects of the VFDSONFET with 30 nm channel length can be improved by reducing the buried dielectric thickness, silicon body thickness, and using a lower-k material as the buried dielectric. The silicon body thickness has the greatest effect on the short channel effect, resulting from the associated capacitance dominating over the buried dielectric capacitance. The drain field effect in the channel region near the source is analyzed, showing that the use of a lower-k buried dielectric localizes the field near the drain and results in a higher potential barrier near the source. *=delta

fully-depleted; silicon-on-nothing; subthreshold slope; drain induced barrier lowering; short channel effects

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